[Nanografi] Prime Si+SiO2 Wafer (wet), Size: 2”, Orientation: (111), Boron Doped, Resistivity: 1 -20 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

[Nanografi] Prime Si+SiO2 Wafer (wet), Size: 2”, Orientation: (111), Boron Doped, Resistivity: 1 -20 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

 

SKU: NG08SW0305

 

Size: 2”, Orientation: (111), Boron Doped, 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm 

Technical Properties: 

Quality	Prime
Materials	Si + SiO2 (wet)
Size (inch)	2”
Orientation	(111)
Coating	500 nm
Thickness (μm)	500 ± 25
Doping	Boron
Resistivity (ohm.cm)	1-20
Polished	Double  Side

Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures.

Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C.

Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator.

In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics.

It allows a very good thickness uniformity and purity.

Therefore, this is the preferred way to produce high quality thin silicon oxide layers.

Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.